RF1001T2D |
RFQ for RF1001T2D Required Field |
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| Technical/Catalog Information | RF1001T2D |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) (per Diode) | 5A |
| Voltage - Forward (Vf) (Max) @ If | 930mV @ 5A |
| Current - Reverse Leakage @ Vr | 10A @ 200V |
| Reverse Recovery Time (trr) | 30ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-220FN-3 (Straight Leads) |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RF1001T2D RF1001T2D |
| Product | Manufacturers | Pack | D/C |
| RF1001T2D | - | SOP | 06+ |
Typical Application |
Features |
| ·General rectification | · Cathode common type. (TO-220)· Ultra Low VF· Very fast recovery· Low switching loss |
| Parameter | Symbol | Limits | Unit |
| Rverse voltage (repetitive peak) | VRM | 200 | V |
| Reverse voltage (DC) | VR | 200 | V |
| Average rectified fo rward current (*1) | Io | 10 | A |
| Forward peak surge current (60Hz・1cyc.) | IFSM | 80 | A |
| Junction temperature | Tj | 150 | |
| Storage temperature | Tstg | -55 to +150 |
